The Effects of Charged Impurity on the Electrical Properties of Buckled Silicene
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
CMTS02_154
تاریخ نمایه سازی: 29 تیر 1398
Abstract:
In this work, the electrical properties of armchair silicene nanoribbon (ASiNR) in the presence of charged impurity is studied. The non-equiblruim Green s function along with multi-orbital tight-binding is applied to obtain transmission probability. The charged impurities are located in the underlying substrate. Spin-flip along the channel is calculated by using spin transmission probability. Mean free path is reported in presence of a charged impurity.
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Authors
Shoeib Babaee Touski
Department of Electrical Engineering, Hamedan University of Technology, Hamedan ۶۵۱۵۵, Iran