Biaxial Strain Modulates Spin Properties of Monolayer GaTe
Publish place: Fifth International Conference on Quality Research in Electrical and Mechatronics Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ELEMECHCONF05_070
تاریخ نمایه سازی: 21 خرداد 1398
Abstract:
In this paper, spin properties of the mono-layer GaTe under biaxial strain is studied. Spin properties of two structures of GaTe, one with mirror symmetry and the other with inversion symmetry, is studied. We have calculated the band structure of GaTe with and without spin-orbit coupling to find out the importance of spin-orbit interaction (SOI) on its band structure. We find band gap can be modified by applying spin-orbit coupling in the presence of strain. We calculate spin-splitting in conduction and valence band in the presence of strain where the structure with inversion symmetry doesn t show any splitting. We find in some cases, GaTe indicates Rashba dispersion that can be adjusted by strain. The amount of Rashba parameters may be in the order of other reported two-dimensional materials.
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Authors
Shoeib Babaee Touski
Department of electrical engineering, Hamedan University of Technology, Hamedan, Iran
Mohammad Ariapour
Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran