The Effects of Scaling on the Sub-threshold Swing of Ferroelectric Field Effect Transistor
Publish place: Fifth International Conference on Quality Research in Electrical and Mechatronics Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ELEMECHCONF05_071
تاریخ نمایه سازی: 21 خرداد 1398
Abstract:
In this paper, the performance of Ferroelectric field effect transistor (FeFET) with using TCAD simulation is investigated. First, FeFET is compared with conventional FET using TCAD simulations. It found that sub-threshold swing for FeFET is lower than conventional FET. The thickness of Ferroelectric is changed and its effects on theFeFET is studied then compared with conventional FET. Sub-threshold swing and threshold voltage is compared for both transistor. At the end, the transistor is scale down and FeFET in small scale is investigated.
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Authors
Shoeib Babaee Touski
Department of electrical engineering, Hamedan University of Technology, Hamedan, Iran
Elham Shamsian
Department of electrical engineering, Hamedan University of Technology, Hamedan, Iran