Characterization of the Emitter Contact in Poly-emitter Bipolar Transistors for Extraction of the Series Emitter Resistance
Publish place: Fifth International Conference on Quality Research in Electrical and Mechatronics Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ELEMECHCONF05_272
تاریخ نمایه سازی: 21 خرداد 1398
Abstract:
The nonohmic behavior of the emitter contact in bipolar transistors employing polysilicon emitters has been characterized based on an improved open collector method. Fowler-Nordheim tunneling through a triangular potential barrier is ruled out as the dominant transport mechanism at the polysilicon-emitter interface. A subcircuit-based model explaining the effect of substrate bias on the behavior of the series emitter resistance is evaluated for circuit simulation. Finally, extraction of the emitter resistance in presence of nonlinearity associated with transport at the emitter interface is discussed.
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Authors
Shahriar Jamasb
Department of Biomedical Engineering, Hamedan University of Technology, Hamedan, ۶۵۱۶۹-۱۳۷۳۳, Iran