A Highly Linear Low-Area CMOS Image Sensor

This paper presents a high-linearity pixel readout circuit for use in CMOS image sensors. Nonlinearity, total input referred noise, and power consumption of the proposed readout circuit are -60 dB, 411 nV2, and 68 μW, respectively. The proposed pixel readout circuit occupies low silicon area. So, it is suitable for use in a low cost and high precision CMOS imager. Proposed pixel readout circuit has been designed using TSMC 0.18μm 1-poly 4-metal standard CMOS process.

Keywords:

CMOS image sensors , pixel readout circuit , Single slope ADC , fixed pattern noise , Comparator and ramp generator.