Negative-Capacitance Effects in 2D Double Gate Field-Effect Transistors

In this paper, a new 2D double gate field effect transistor (DGFET) is presented. In the proposed structureferroelectric is used in double side of the DGFET and single layer MoS2 has been used as the channel of the DGFET.The effect of ferroelectric layer on the subthreshold swing is investigated in the proposed DGFET using an analyticalsubthreshold model. Analytical models demonstrate that using ferroelectric in double side of 2-D DGFET improvesaverage subthreshold swing to about 18 mV/dec.

Keywords:

NCFET , MoS2 , subthreshold swing , NCDGFET