Design of Carbon Nanotube Field Effect Transistorsfor A/D circuit design
Publish place: کنفرانس بین المللی پژوهش در علوم و مهندسی
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICRSIE01_008
تاریخ نمایه سازی: 25 آذر 1395
Abstract:
Carbon Nanotube Field Effect Transistors model is presented in simulation for electronic circuitdesign. The model is grounded on parameters extracted from quantum mechanical simulations of thedevice dependent on nanotube diameter and oxide capacitance. A relative error has been witnessed incomparison of the simulated output and transfer characteristics with output and transfer characteristicsin numerical model. A novel procedure has been proposed to determine values ofCarbon Nanotube Field Effect Transistors. The proposed model has been used in simulator to designA/D electronic circuits, indicating significance of quantum capacitance dependent on polarizationvoltage and investigating effects of carbon nanotube quantum resistances.
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Authors
Mohammad Reza Hemmati
Faculty of computer,najafabad branch,islamic azad university,najafabad,iran