Ultra Gain, Low-Power, High Swing Temperature-Insensitive Operational Amplifier

An ultra gain, low power, high swing CMOS Op-Amp in0.18 μm technology is presented. To enhance a high dc gain twostage cascode topology has been employed, Also a new techniqueis used to improve unity gain bandwidth and dc gain. The proposedOp-Amp provides 97dB dc gain, 438 MHz unity-gain bandwidth,60 degrees phase margin and 1.52V peak to peak swing voltage.designed circuit is simulated with Hspice simulation software in0.18 μm. Power dissipation of this Op-Amp is 70

Keywords:

Two stage Op-Amp , cascode , slew rate , swing , unity gain bandwidth , low power , low voltage , Temperature-Insensitive