A Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers

Publish Year: 1396
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:

JR_JIAE-14-4_001

تاریخ نمایه سازی: 1 اردیبهشت 1397

Abstract:

A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obtain a high and smooth power gain for the whole frequency band. Impedance matching and noise matching are designed with double feedback and only one inductor that are used at the input of the LNA. Post layout simulation is done for design validation. In this design post layout simulations show the low noise figure of 3.85±0.25 dB, reasonable power gain (18.08dB) and input returnloss less than -9.1dB in full band of UWB. The power consumption of the circuit is only11.3mW from 1.8V voltage supply. The LNA has the group delay about 111±43ps. An input third-order intermodulation point (IIP3) of -9.2 dBm is achieved at 4 GHz. The layout area is 1.056 × 0.658 mm2

Authors

Amir Farzad Khavari

Ph.D. Candidate, Department of Electrical Engineering, Faculty of Engineering, Ferdowsi University, Mashhad, Iran

Khalil Mafinezhad

Full Professor, Department of Electrical Engineering, Sadjad University of Technology, Mashhad, Iran

Mohammad Maymandi Nejad

Associate Professor, Department of Electrical Engineering, Faculty of Engineering, Ferdowsi University, Mashhad,Iran