Investigation of the performance and characteristics of linear dopedTunneling carbon nanotube field effect transistor
Publish place: National Congress on Chemistry and nano-chemistry, from research to national development
Publish Year: 1396
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
MRSS01_018
تاریخ نمایه سازی: 29 فروردین 1397
Abstract:
A tunneling carbon nanotube field effect transistor with linear doped (LD-T-CNTFET) is presented for investigating band to band tunneling and improving the device characteristics with a non-equilibrium Green’s function (NEGF) method. The LD-T-CNTFET structure includes two linear doped regions between the intrinsic channel and the highly doped source and drain regions which are called the linear doped drain and source T-CNTFET. Simulations have shown that LD-T-CNTFET characteristics are attributed to the linear doped region length. In comparison with a T-CNTFET, an LD-T-CNTFET with linear doped drain and source regions has shown a smaller off current (IOFF), a smaller sub-threshold swing, a lower on-current and tunneling current
Keywords:
Band to band tunneling (BTBT) , Tunneling carbon nanotube field effect transistor (T-CNTFET) , linear doped drain and source (LD) , non-equilibrium Green’s function (NEGF)
Authors
Najmeh Valed Karimi
Electrical Engineering department, Young Researchers and Elite Club, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran
Yaghoub Pourasad
Electrical Engineering department, Urmia University of Technology, Urmia, Iran