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New Domino Design for Robust High Fan-in Gates

عنوان مقاله: New Domino Design for Robust High Fan-in Gates
شناسه ملی مقاله: ITCC03_046
منتشر شده در سومین کنگره بین المللی کامپیوتر، برق و مخابرات در سال 1395
مشخصات نویسندگان مقاله:

Mohammad Asyaei - School of Engineering Damghan University Damghan, Iran
Mohammad Reza Saadaty - School of Engineering Damghan University Damghan, Iran

خلاصه مقاله:
High fan-in domino gates are used in the critical path of modern microprocessors to improve the performance, but the conventional domino logics suffer from leakage current and lower noise immunity, especially in sub-micron technologies. In this paper, a new circuit design for low leakage and noise immune high fan-in domino gates is proposed. The proposed circuit technique uses diode-footed transistor and current mirror to control PMOS keeper transistor. This results in reduction of the contention between the keeper transistor and pull down network from which other techniques suffer. Moreover, by using the stacking effect, leakage current is reduced and the performance of the current mirror is improved. High fan-in OR gates are simulated using a 07-nm CMOS predictive technology model (PTM) at a power supply of 7.0-V. Simulation results demonstrate that the proposed circuit exhibits about %72 less power consumption and nearly %2 fold improvement in noise immunity compared to the standard domino circuit.

کلمات کلیدی:
domino logic, high fan-in gates, noise immunity, leakage current

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/576134/