Unesco Chakma - Department of Electrical and Electronic Engineering, European University of Bangladesh, Gabtoli, Dhaka-۱۲۱۶, Bangladesh
Ajoy Kumer - Department of Chemistry, European University of Bangladesh, Gabtoli, Dhaka-۱۲۱۶, Bangladesh
Kamal Bikash Chakma - Department of Electrical and Electronic Engineering, European University of Bangladesh, Gabtoli, Dhaka-۱۲۱۶, Bangladesh
Md. Tawhidul Islam - Department of Electrical and Electronic Engineering, European University of Bangladesh, Gabtoli, Dhaka-۱۲۱۶, Bangladesh

Electronic band structures, the total density of state, partial density of state and optical properties were investigated using first principle method for Ag2BiO3 via Generalized Gradient Approximation (GGA) based on the Perdew–Burke–Ernzerhof (PBE0). The band gap was found to be 0.490 eV which is supported for good semiconductor. The density of state and partial density of state were simulated for evaluating the nature of 5s, 4d for Ag, 6s, 4f, 5d, 6p for Bi and 2s, 2p for oxygen atom for Ag2BiO3 orbital travelling from the maximum valance band to minimum conduction band to explain the transition of electron due to hybridization. The optical properties including, absorption, reflection, refractive index, conductivity, dielectric function and loss function were calculated which can account for the superior absorption of the visible light. The key point of this research study was to determine the activity on electronics structure and optical properties for Fe doped by 12%. Regarding the band gap and optical properties, Ag2Bi0.88Fe0.12O3 can give more conductivity compared with that than of the Ag2BiO3,showing as a superconductor.

Electronic structure, Band gap, Density of states, Optical properties