Novel Nanoscale Vertical Extended Source Tunnel Field Effect Transistor
Publish Year: 1399
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
COMCONF07_195
تاریخ نمایه سازی: 22 مرداد 1399
Abstract:
In this paper, we propose the novel nanoscale vertical extended source tunnel field effect transistor (TFET) to simultaneously improve the on-current and the average subthreshold swing and the immunity against the DIBL effects compared to a conventional TFET using calibrated simulations. The proposed structure consist of a Si-channel double gate TFET with a vertical extended p+-layer connected to the source region (VES TFET). The results of proposed structure show higher on-current by more than a factor 1.5 in comparison with conventional TFET, and high ION/IOFF ratio (about 1013) and an average subthreshold slope of about 11 mV/decade over 4 decades of current at room temperature. The results suggest that, the TFET with vertical extended p+-layer connected to the source region can be implemented as a low-power replacement for MOSFET
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Authors
Saeid Marjani
Khorasan Regional Electrical Company, Mashhad
Mohamad Tolue Khayami
Khorasan Regional Electrical Company, Mashhad