Gh Sareminia - aSAiran-Electronic Components Industry (ECI)-Optoelectronic industry, Tehran, Iran.
M Heidari Saani - aSAiran-Electronic Components Industry (ECI)-Optoelectronic industry, Tehran, Iran.
Ar Karamian - bMathematics department, Razi University Kermanshah, Iran
Ao .Alipour - aSAiran-Electronic Components Industry (ECI)-Optoelectronic industry, Tehran, Iran.

In this paper we report the growth and characterization of silicon dioxide films depositedon<111>InSb(B-face).The high performance Au/Cr/SiO2/InSb/Au metal-insulatorsemiconductor was fabricated by evaporation of metals in vacuum.The effects of N2O/SiH4 flow rate, deposition pressure and SiH4 gas flow rate on deposition rate, etch rate and uniformity of silicon dioxide films were investigated. The C-V results show that at 77 K MIS structure there are positive charges in the silicon dioxide films and interface .The dielectric constant and refractive index of PECVD deposited films was compared with dielectric constant and refractive index of thermally grown films.

PECVD, SiH4, Etch Rate, Deposition Rate, Dielectric Constant