Mohamad Tolue Khayami - Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran
Saeid Marjani - Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran

Using calibrated simulations, we report a detailed study of the tunneling field-effect transistor (TFET) with the drain pocket as a means to improve the subthreshold swing, switching state current ratio, ambipolar conduction and stability. By inserting the n-type pocket layer between the channel and drain, off- state current is reduced by about 45 times compared with the conventional SOI TFETs, respectively, due to energy band modification imposed by the pocket doping. The suggested device structure can eliminated the ambipolar current up to a gate voltage of -0.25 V. Also, the variation of the transfer characteristics with the drain pocket parameters in terms of doping concentration and width were investigated to optimize the device performance. Additionally, the stability performance is studied considering pocket width and doping variation. The results show that proposed TFET is a promising candidate to strengthen the performance of stable high-speed switching relay.

Ambipolar current, Stability, Tunneling field-effect transistor (TFET), Stable high-speed switching relay.