تاثیر فرایند سینتر بر خواص الکتریکی و ریزساختاری تارگت کند و پاش و لایه ی نازک باریوم استرانسیوم تیتانات

In this study the effect of sintering parameters on the microstructure and electrical properties of the barium strontium titanate sputtering target is investigated. For optimizing the sintering temperature, BST compacts sintered at various temperatures ranging from ۱۲۰۰ to ۱۴۰۰ ºC for ۲ hours. The sintered Barium Strontium Titanate sputtering target comprising with a high density, purity and a fine-grained microstructure has been also fabricated. Optimized calcining and sintering condition was obtained by controlling sintering temperature and time to fabricate single phase, high relative density sintered body. A relative density of up to ۹۵% and mean grain size of ۸ µm were reached at the sintering temperature of ۱۲۵۰C. The relative permittivity of thin films at ۱۰ KHz was around ۴۴۰۰. Also the thin film bandgap was around ۳.۲ eV. The densities of the sintered samples were measured using the Archimedes method. Characteristics of the body were analyzed by X-ray diffraction (XRD), optical microscopy. Dielectric permittivity (εr) were measured with an HP ۴۱۹۲A impedance analyzer and thin film bandgap was analyzed by UV-Vis method.

Keywords:

اریوم استرانسیوم تیتانات , تارگت کندوپاش , سینتر , سنتز حالت جامد