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Design and Simulation of Ternary Inverter Gate based on Nanowire FET

عنوان مقاله: Design and Simulation of Ternary Inverter Gate based on Nanowire FET
شناسه ملی مقاله: STCONF04_022
منتشر شده در چهارمین همایش ملی فناوریهای نوین در مهندسی برق، کامپیوتر و مکانیک ایران در سال 1400
مشخصات نویسندگان مقاله:

Ashkan Horri - Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran.

خلاصه مقاله:
In this paper an efficient ternary inverter gate is simulated. The main part of this design is a nanowire FET(NFET) and there are three separated gates on that oxide. By using this design, all three parts of ternary inverter include standard ternary inverter (STI), negative ternary inverter(NTI), and positive ternary inverter (PTI) are implemented by one circuit and without hardware change. The type of inverter function can be specified by the control gate voltage level. Self-consistent Schrodinger- Poisson equations is used to simulate the device. The simulation results indicate that the noise margins have improved a lotcompared to previous designs

کلمات کلیدی:
Nanowire FET; STI; NTI; Schrodinger-poisson

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/1292658/