J. Pandiarajan - Nanoscience Research Lab, Department of Physics, V. H. N. S. N. College, Virudhunagar – ۶۲۶ ۰۰۱, Tamilnadu, India.
N. Jeyakumaran - Nanoscience Research Lab, Department of Physics, V. H. N. S. N. College, Virudhunagar – ۶۲۶ ۰۰۱, Tamilnadu, India.
B. Natarajan - Department of Physics, R.D. Government Arts College, Sivagangai – ۶۳۰ ۵۶۱, Tamilnadu, India.
N. Prithivikumaran - Nanoscience Research Lab, Department of Physics, V. H. N. S. N. College, Virudhunagar – ۶۲۶ ۰۰۱, Tamilnadu, India.

Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (۱۰۰) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of porosity were determined by Effective Medium Approximation methods. The influence of current density on porosity and refractive index of PS, were discussed. SEM images indicated that the pores are surrounded by a thick columnar network of silicon walls. This porous silicon layer can be considered as a sponge like structure. The sizes of PS nanocrystallites were determined by XRD studies. FTIR spectra indicated that the porous layer contain SiHn complexes. PL study reveals that there is a prominent emission peak at ۶۰۶ nm. No spectral shift was observed. These results suggest that this nanocrystalline porous silicon could be a potential candidate for optical as well as optoelectronic device applications.

Porous Silicon, current density, Porosity, Refractive index, SEM, XRD, FTIR, Photoluminescence, Device applications