Rh. Saikia - Department of Electronics & Communication Technology, Gauhati University, Guwahati-۷۸۱۰۱۴, India.
P.K. Kalita - Department of Physics, Guwahati College, Guwahati-۷۸۱۰۲۱, India.
P. Datta - Department of Electronics & Communication Technology, Gauhati University, Guwahati-۷۸۱۰۱۴, India.
K. K. Chattopadhyay - Department of Physics, Jadavpur University, Jadavpur-۷۰۰۰۳۲, India.

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact between silver (Ag) and CdSe nanostructures. Intrinsic and contact behaviors such as saturation current, barrier height, effective Richardson constant, electron affinity and ideality factor were calculated from the current-voltage characterization.

Green synthesis, CdSe nanostructure, Schottky cell, Optoelectronic characterization, Energy Band Diagram