Determination of porous Silicon thermal conductivity using the “Mirage effect” method
عنوان مقاله: Determination of porous Silicon thermal conductivity using the “Mirage effect” method
شناسه ملی مقاله: JR_IJND-5-3_008
منتشر شده در در سال 1393
شناسه ملی مقاله: JR_IJND-5-3_008
منتشر شده در در سال 1393
مشخصات نویسندگان مقاله:
F. Alfeel - Department of Physics, Science Faculty, Damascus University, Syria.
F. Awad - Department of Physics, Science Faculty, Damascus University, Syria.
F. Qamar - Department of Physics, Science Faculty, Damascus University, Syria.
خلاصه مقاله:
F. Alfeel - Department of Physics, Science Faculty, Damascus University, Syria.
F. Awad - Department of Physics, Science Faculty, Damascus University, Syria.
F. Qamar - Department of Physics, Science Faculty, Damascus University, Syria.
Mirage effect is contactless and non destructive method which has been used a lot to determine thermal properties of different kind of samples , transverse photothermal deflection PTD in skimming configuration with ccd camera and special programs is used to determine thermal conductivity of porous silicon ps film. Ps samples were prepared by electrochemical etching. Thermal conductivity with porosity changing was measured and the experiments result compared with theoretical results, and they were almost the same.
کلمات کلیدی: Mirage effect, Non destructive method, Photothermal deflection PTD, Thermal conductivity, Porous Silicon, Electrochemical etching, Nano crystalline, Film
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/1483191/