S. Sagadevan - Department of Physics, Sree Sastha Institute of Engineering and Technology, Chembarambakkam, Chennai ۶۰۰۱۲۳, India.
K. Pandurangan - Department of Physics, Madha Engineering College, Kundrathur, Chennai, India.

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite size and scanning electron microscopy is used to study the morphology of Zn-CdS thin film. Optical studies have been carried out using UV-Visible-NIR transmission spectrum. The dielectric properties of Zn-CdS thin films have been studied in the different frequency at different temperatures. The AC conductivity study shows a normal dielectric behavior with frequency which reveals that the dispersion is due to the interfacial polarization.

Solar Cell, Cadmium Zinc Sulfide, XRD, SEM analysis, Dielectric constant and Dielectric loss