Osman Murat Ozxkendir - School of Graduate Programs, Tarsus University, Tarsus, Turkey

Indium phosphide (InP) semiconductor isa well-known binary semiconductor. The electronicproperties have helped this material gain high popularity dueto its desired semiconductor properties. In this study, the InPsemiconductor was processed with Sn substitution in theindium coordination to probe the influence of electronicinterplays on the electronic properties of semiconductormaterials. The study is carried by the x-ray absorption finestructure (XAFS) spectroscopy calculations. Tin is one of themost popular metal used in recent technology due to itspotential to emerge desired electronic properties. Thecalculations were performed by the commercial code FEFF۸.۲ for a ۱۰ Å thick cluster. The results showed a possibleapplication of Sn substitution can yield better semiconductorproperties in an electronic device application.

Crystal structure; Electronic structure; Semiconductor; Absorption spectroscopy