A Novel Design and Simulation of InGaP/GaAs ARCSolar Cell with ۴۳.۶% efficiency under AM۱.۵GStandard Spectrum

In this paper, an InGaP/GaAs double-junction solar cell based on the back-surface field (BSF) layer is selected, and adding an intrinsic material to the tunnel junction is proposed. Effective BSF is an important element for efficiency in a double-junction solar cell structure. Important parameters of open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF) and efficiency (η) in the proposed solar cell model are calculated VOC=۲.۷V, JSC=۱۸۹۴.۶mA/cm۲, FF=۸۷.۵% and η=۴۳,۶%, respectively. The simulations are obtained at solar intensities (۱,۰۰۰ suns) under the AM۱.۵G standard spectrum.

Keywords:

Solar Cells , Back-Surface Field (BSF) , Anti-Reflection Coating (ARC).