A Novel Method to Improve Linearity of High Frequency Circuits Designed with PD SOI MOSFET
عنوان مقاله: A Novel Method to Improve Linearity of High Frequency Circuits Designed with PD SOI MOSFET
شناسه ملی مقاله: ICEE19_162
منتشر شده در نوزدهمین کنفرانس مهندسی برق ایران در سال 1390
شناسه ملی مقاله: ICEE19_162
منتشر شده در نوزدهمین کنفرانس مهندسی برق ایران در سال 1390
مشخصات نویسندگان مقاله:
Arash Daghighi - Assistant Professor, Shahrekord University, Shahrekord, Iran
Neda Pourdavoud - Young Researchers Club, Najafabad Islamic Azad University, Isfahan, Iran
خلاصه مقاله:
Arash Daghighi - Assistant Professor, Shahrekord University, Shahrekord, Iran
Neda Pourdavoud - Young Researchers Club, Najafabad Islamic Azad University, Isfahan, Iran
A novel method to improve linearity of PD SOI MOSFET circuits is presented. There is a transition in the output-conductance of body-contacted PD SOI device associated to the finite body resistance (RB). The transition degrades the device linearity specifications, particularly, HD3 and IP3. A relation for the body resistance is extracted toeliminate the transition. Using device simulation, the transitionfree curve for the operation of a 45 nm PD SOI MOSFET was extracted. A 2.4 GHz low noise amplifier was designed to operate in the transition-free region. Mixed circuit device simulation of LNA showed at least 7 dB enhancement of HD3 and 4 dB improvement of IP3. Simulation results verified the high frequency advantage of transition-free design
کلمات کلیدی: Silicon-on-Insulator MOSFET, Bodycontact, Body resistance, Output conductance, ThirdHarmonic Distortion, Third Intercept Point, Low Noise Amplifier
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/153735/