Analysis of a Source Hetrojunction LDMOS Device with Strained Silicon Channel

In this paper we propose a novel power MOSFET employing a source and drain hetrojunction as well as a thin strained silicon layer at the top of the channel and N-Drift regions. We discuss the physics involved in the operation of this device. Analysis using a 2D device simulator indicates improvements of 36.6%, 22.6% and 10% in current drivability, transconductance and cut off frequency respectively as compared with the traditional LDMOS structure. However, these improvements are accompanied by a suppression of 10% in the break down voltage

Keywords:

SHOT LDMOS , POWER MOSFET , (RADIO) HIGH FREQUENCY