Analysis of a Source Hetrojunction LDMOS Device with Strained Silicon Channel
عنوان مقاله: Analysis of a Source Hetrojunction LDMOS Device with Strained Silicon Channel
شناسه ملی مقاله: ICEE19_211
منتشر شده در نوزدهمین کنفرانس مهندسی برق ایران در سال 1390
شناسه ملی مقاله: ICEE19_211
منتشر شده در نوزدهمین کنفرانس مهندسی برق ایران در سال 1390
مشخصات نویسندگان مقاله:
Vala Fathipour - Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
Mohamad Ali Malakoutian
Mortez Fathipour
خلاصه مقاله:
Vala Fathipour - Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
Mohamad Ali Malakoutian
Mortez Fathipour
In this paper we propose a novel power MOSFET employing a source and drain hetrojunction as well as a thin strained silicon layer at the top of the channel and N-Drift regions. We discuss the physics involved in the operation of this device. Analysis using a 2D device simulator indicates improvements of 36.6%, 22.6% and 10% in current drivability, transconductance and cut off frequency respectively as compared with the traditional LDMOS structure. However, these improvements are accompanied by a suppression of 10% in the break down voltage
کلمات کلیدی: SHOT LDMOS, POWER MOSFET, (RADIO) HIGH FREQUENCY
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/153784/