A Fully Integrated CMOS Low Noise Amplifier for IEEE 802.11a Standard Applications

In this paper, a fully integrated CMOS low noise amplifier (LNA) with on-chip spiral inductors in 0.18μm CMOS technology for IEEE 802.11a applications is presented. Using cascode topology and modified input impedance network as well as inductor neutralization technique, the LNA power dissipation is lowered to 15.8mW while having power gain of 17.82dB and reverse isolation factor of -58.37dB at centre frequency of 5.5GHz. S11 and S22 are equal to -16.1dB and - 32dB, respectively. Designed LNA has IIP3 of +3dBm and less than 2.9dB noise figure (NF) in working band width, as resulted from transistor level simulation using TSMC RF CMOS 0.18 μm design kit

Keywords:

RF CMOS LNA , Low noise amplifier , RF front-end , Ultra Wide Band (UWB) , inductive neutralization