Rashid Mirzavand - Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran
Abdolali Abdipour
Gholamreza Moradi
Masoud Movahhedi

This paper describes an new application of weighted Laguerre polynomial functions to produce a unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of microwave active devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.

Microwave FET Transistor, Semiconductor Device, finite-difference Laguerre time-domain (FDLTD), Drift-Diffusion Model