Habib Vahidi - Department of Electrical Engineering, Shahid Beheshti University, Tehran, Iran
Kambiz Abedi

In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, VπL as low as 5 V-cm and electrical bandwidth as high as 220 GHz

Substrate removed, the Finite Element Method, travelling wave, Electrooptic coefficient,semiconductor electrooptic modulators