Dependence of Self-Heating Effect on Substrate in AlGaN/GaN HEMT Devices
عنوان مقاله: Dependence of Self-Heating Effect on Substrate in AlGaN/GaN HEMT Devices
شناسه ملی مقاله: ICEE20_371
منتشر شده در بیستمین کنفرانس مهندسی برق ایران در سال 1391
شناسه ملی مقاله: ICEE20_371
منتشر شده در بیستمین کنفرانس مهندسی برق ایران در سال 1391
مشخصات نویسندگان مقاله:
Ali Haghshenas - University of Tehran
Morteza Fathipour - University of Tehran
خلاصه مقاله:
Ali Haghshenas - University of Tehran
Morteza Fathipour - University of Tehran
in this paper, the effect of substrate on thermal resistance of AlGaN/GaN HEMT devices is investigated. The results of this investigation show that device self-heating isstrongly affected by the thickness and material type of substrate and the thermal conductivity of materials utilized in device structure. Sapphire, SiC and GaN substrates are usually used inAlGaN/GaN HEMT devices. For AlGaN/GaN HEMT device, we have investigated that how the use of these substrates influence heating characteristics of the device
کلمات کلیدی: component; AlGaN, GaN, High Electron Mobility Transistor (HEMT), Self-heating
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/154583/