Saeid Marjani - Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran
Hamid Mousavi - Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran

The carrier collection physics of SHJ cells are fundamentally different from homo-junction devices. While high efficiencies have already been achieved with SHJ cells, continued improvements in the understanding of their device physics will aid in the optimization of future generations of SHJ cells. As SHJ structures are implemented in more complex multidimensional geometries such as the interdigitated back contact scheme, it will be important to consider lateral carrier transport mechanisms such. SHJ cells are also promising for application in thin-absorber applications such as kerf-less or film Si. In this paper, novel SHJ solar cells with local epitaxial defects is presented and performance-limiting mechanisms and understanding how the its properties affects device performance as discussed. In summary, the results indicate that the primary effect of increasing defect density in the epitaxial region is to limit the Voc.

Silicon heterojunction (SHJ), Solar cells, Local epitaxial defects.