Reza Sahragard shahrakht - Electronics Group, Engineering Faculty, University of Birjand, Birjand, Iran
Mehdi Forouzanfar - Electronics Group, Engineering Faculty, University of Birjand, Birjand, Iran
Abolfazl Bijari - Electronics Group, Engineering Faculty, University of Birjand, Birjand, Iran

High output power, good efficiency, sufficient power gain, compact size, and low cost are essential parameters of high-frequency integrated microwave power amplifiers. Due to its unique characteristics, gallium nitride is considered a good choice for realizing high-frequency power amplifiers. This article presents an integrated microwave power amplifier with high efficiency and wide bandwidth in ۰.۲۵ μm GaN technology. Input and output matching networks are realized using spiral inductors, on-chip resistors, on-chip capacitors, and appropriate transmission line structures. The optimal values of the elements have been determined using the random and hybrid optimizer in the ADS simulator. Large on-chip inductors in the drain and gate bias circuits were used for biasing. They were designed in such a way that no ac signal leaks into the bias circuit. The proposed circuit works at ۶.۸ GHz to ۱۱ GHz frequency, while its maximum PAE is ۶۰%. The small signal gain at the frequency of ۹.۸ GHz is ۱۲.۴۵ dB, whereas the saturated output power is ۳۲.۶۸ dBm.

Power Amplifier, Output Power, power added efficiency, GaN HEMT, Bandwidth, gain