Energy Relaxation Rate of Hot Electrons by Acoustics and Optical Phonons in AlGaN/GaN Quantum Wells

The wide band gap III–N semiconductor materials have been the subject of intensive investigation, both theoretical and experimental, in view of their applications in electronic and optoelectronic devices. A detailed study of the energy and momentum relaxation together with the determination of the dominant scattering mechanisms in these materials are crucial for obtaining a comprehensive understanding of the carrier dynamics, especially at high operating electric fields. The 2D electron gas at the AlGaN/GaN heterointerface arises as a result of the spontaneous and piezoelectric polarization of the material without any intentional doping. In this work we study an undoped AlGaN/GaN quantum wells. The energy loss rate quantum well are calculated as a function of the external controllable parameters (electrons density), L (well width), TL (lattice temperature), Te (electron temperature), x (percent Al alloy) and numbers of wells for the interaction of the charge carriers with bulk acoustic (deformation potential and piezoelectric scattering) and optical phonons