CFD -based optimization of MOCVD process in an atmospheric pressure vertical rotating disk reactor

In this work,optimization of metalorganic chemical vapor deposition process for more layer thickness uniformity with especial attention to reactor geometric parameters as decisions variables is presented.A numerical solution to a steady thermal flow associated with multi-species and chemical reactions in atmospheric pressure axisymmetrical rotating disk reactor corresponding to metalorganic chemical vapor deposition process, by the CFD technique is obtained. Then validation of the numerical results with thebenchmark solutions is conducted and finally integrating the CFD simulator with an optimization program as a new approach is carried out to obtain the optimum value of decision variables.The obtained optimum configuration, results in a decrease in thickness deviation of deposited film from 29.8% to 16.5%.

Keywords:

Transport phenomena , CFD , MOCVD Optimization , geometric parametres