Amin Zafarian - Electrical Engineering Department, Islamic Azad University Branch Of Arak, Iran
Iraj Kalali Fard - Institute of Communication Systems and Data Processing, RWTH Aachen University
Abbas Golmakani - Electrical Engineering Department, Sadjad Institute for Higher Education, Mashhad, Iran
Jalil Shirazi - Electrical Engineering Department, Islamic Azad University Branch Of Gonabad, Iran

A fully integrated low-noise amplifier (LNA) with ۰.۴V supply voltage and ultra-low power consumption at ۱.۵GHz by folded cascode structure is presented. The proposed LNA is designed in a TSMC ۰.۱۸ µm CMOS technology, in which the all transistors are biased in sub-threshold region. Through the use of the proposed circuit for the gain enhancement in this structure and using forward body bias technique, a very high figure of merit is achieved, in comparison to the similar structures. The LNA provides a power gain of ۱۴.۷bB with a noise figure of ۲.۹dB while consuming only ۷۹۰µW dc power. Also, the impedance matching of the input and output circuit in its operating frequency is desirable and in the whole circuit bandwidth, input and output isolation is below -۳۳dB.

en