SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT
عنوان مقاله: SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT
شناسه ملی مقاله: JR_MJEE-1-1_008
منتشر شده در در سال 1386
شناسه ملی مقاله: JR_MJEE-1-1_008
منتشر شده در در سال 1386
مشخصات نویسندگان مقاله:
خلاصه مقاله:
We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.
کلمات کلیدی: en
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/1799765/