Design and Simulation of an Ultraviolet GaN LED
عنوان مقاله: Design and Simulation of an Ultraviolet GaN LED
شناسه ملی مقاله: NCEEM12_011
منتشر شده در دوازدهمین کنفرانس ملی مهندسی برق مجلسی در سال 1402
شناسه ملی مقاله: NCEEM12_011
منتشر شده در دوازدهمین کنفرانس ملی مهندسی برق مجلسی در سال 1402
مشخصات نویسندگان مقاله:
Behnam Okhravi - Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
Mohsen Ghasemi - Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
خلاصه مقاله:
Behnam Okhravi - Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
Mohsen Ghasemi - Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
This work presents the design and simulation of AlGaN/GaN based UV-A LED on a sapphire substrate. We used periodic layers as multiple-quantum-well to reach better optoelectronic properties and used EBLs to reduce the leakage current in modern multi-quantum-well. We deposited ITO as a top layer and Ni/Au to form ohmic contacts to p-type GaN and approach higher frequency response. We performed simulation by “SILVACO Software” and followed the fabrication process based on “ATHENA” rules and techniques.
کلمات کلیدی: Silvaco, LED, Ultraviolet, Deposition, Etching, Athena, Ohmic contact, Oxide, GaN
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/1824599/