Hajar Farshidi - Department of Semiconductors, Materials and Energy Research Center, Karaj, Iran
Amir Ali Youzbashi - Department of Semiconductors, Materials and Energy Research Center, Karaj, Iran
Alimorad Rashidi - Nanotechnology Research Center, Research Institute of Petroleum Industry, Tehran, Iran
Ali Asghar Kazem Zadeh - Department of Semiconductors, Materials and Energy Research Center, Karaj, Iran

Lead sulfide have been the subject of the considerable research due to the technical importance incrystalline and polycrystalline forms as infrared radiation detectors, infrared emitter and solarcontrol coatings. Chemical solution deposition offers a simple, cost effective and industriallyscalable route for the fabrication of high-quality semiconductor films.The two principal deposition mechanisms in which CBD proceed are known as cluster mechanismand ion by ion mechanism. By controlling the deposition conditions such as time or temperature itis possible to control the active deposition mechanism. Each mechanism has specific depositionrate and morphology. So evolution in mechanism results in changes in the final film thickness andmorphology.In this work, PbS thin films were deposited from solution containing Pb(NO۳)۲, CS(NH)۲ andNaOH on glass substrate at different temperatures. The films were characterized by severalstructural technique including X-ray diffraction, atomic force microscopy, scanning electronmicroscopy.The results of present study suggest that the transition in the active deposition mechanism occurwith increasing in deposition temperature and affect the films properties such as thickness andmorphology.

PbS thin film, Chemical Bath Deposition, Deposition Mechanism