Mahya Sadat Hosseini - MSc at Department of Materials Science and Engineering Imam Khomeini international university
Alireza Aghaei - Assistant professor at Department of Nano Materials Science, Faculty of Technology and Engineering, Materials and EnergyResearch Center
Mohammad Masoud Mohebi - Assistant professor at Department of Materials Science and Engineering, Faculty of Technology and Engineering, ImamKhomeini International University
Azam MoosaviKashi - Assistant professor at Department of Materials Science and Engineering, Islamic Azad University, Science and ResearchBranch, Tehran

In this work, Nb+۵-doped PZT (PZTN) compositions close to the morphotrophic phase boundary(MPB) was successfully synthesized by solid state reaction method. The effect of donor andacceptor dopants on electrical properties of PZTN was investigated. Phase formation of ZT, PZTNand La, Ba, Fe and Mg-doped PZTN samples was investigated by x-ray diffraction (XRD). Thedensification and microstructure of the specimens were carried out by scanning electronmicroscopy (SEM). Piezoelectric charge coefficient and dielectric constant measurements ofsamples were carried out by varying the type of the added dopants with similar concentration toPZTN compositions. The result indicate that the d۳۳ of PZTN and La, Ba, Fe and Mg-doped PZTNcompositions were found ۳۵۹, ۳۱۰, ۳۰۴, ۳۲۱ and ۲۷۶ PC/N and the r of them were found ۱۴۰۲,۱۲۸۰, ۱۰۶۹, ۱۲۵۶, ۸۸۴. The maximum relative density (۹۸%), d۳۳: ۳۵۹ PC/N, r: ۱۴۰۲ and lowesttan value (۲.۱) were obtained for the PZTN specimen.

PZT, Solid state reaction, Dopants, Electrical properties