Bahareh Boroomand Nasab - Department of Electrical Engineering, Faculty of Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran
Abdolnabi Kosarian - Department of Electrical Engineering, Faculty of Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran
Navid Alaei Sheini - Department of Electrical Engineering, Faculty of Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran

Zinc oxide nanostructures are deposited on glass substrates in the presenceof oxygen reactive gas at room temperature using the radio frequency magnetronsputtering technique. In this research, the effects of zinc oxide sputtering pressure on thenanostructure properties of the deposited layer are investigated. The deposition pressurevaries from ۷.۵ to ۲۰.۵ mTorr. AFM results show that with an increase in the depositionpressure, the grain size increases and the surface roughness decreases. The energy gapmeasured for the zinc oxide layers deposited at the pressures of ۷.۵, ۱۴ and ۲۰.۵ mTorrwas ۳.۲۶, ۳.۱۸, and ۳.۱۹ eV, respectively. In order to investigate the junction betweenzinc oxide and poly (۳, ۴-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS),a polymeric layer of thickness of ۵۰ nm is deposited on a ۳۰۰ nm zinc oxide layer byspin coating technique. The dark I-V characteristics indicate that the reverse saturationcurrent density is ۱.۸۲ ۱۰-۶, ۱.۹۶ ۱۰-۷ and ۷.۵۸ ۱۰-۸ A/cm۲ for the depositionpressures of ۷.۵, ۱۴, and ۲۰.۵ mTorr, respectively. By increasing the deposition pressurethe ideality factor of the resulting Schottky barrier dropped from ۳.۴ to ۱.۷. Theeffective Schottky barrier height of ۰.۷۳, ۰.۷۸, and ۰.۸۱ eV was obtained for the sameorder of deposition pressures. It was found that the highest optical response could beobtained for the samples deposited at the deposition pressure of ۱۴ mTorr..

Ideality Factor, PEDOT:PSS, Radio Frequency Magnetron Sputtering, Schottky Barrier, Zinc Oxide