Masoud Jabbari - Department of Electrical Engineering, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
Mehdi Dehghan - Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran ۱۴۷۷۸۹۳۸۵۵, Iran
Mohammad kazem m moravvej farshi - School of electrical and computer engneering,tarbiat modares university
Ghafar Darvish - Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran ۱۴۷۷۸۹۳۸۵۵, Iran
Mohsen Ghaffari-miab - School of Electrical and Computer Engineering, Tarbiat Modares University

In this paper, we present a switch based on coupling and resonance in thegraphene plate and rings operating at ۱۰ THz. This structure consists of several layers ofHexagonal Boron Nitride (hBN), SiO۲ and P+Si, such that graphene plates and rings areinside the hBN layer. The terahertz wave is incident from the upper part of the switchand Surface Plasmons (SPs) are excited by the grating in the structure on the grapheneplate beneath the nano-aperture and moves towards the ports available on the left andright of the switch. At first, at the certain applied voltage, the SPs cross the left port andthis port is ON. With the increase in voltage and the change in the chemical potential,switching occurs and the SPs exit from the right and this port is ON while the left portturns OFF. The extinction ratio in this structure is ۱۸dB and the size of the structure is۱μm. Aforementioned benefits make this switch the best choice for using in integratedoptical circuits.

Bidirectional Switch, Graphene, Resonance, Chemical Potential