Payman Bahrami - Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
Mohammad Reza Shayesteh - Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
Majid Pourahmadi - Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
Hadi Safdarkhani - Department of Electrical Engineering, Yazd University, Yazd, Iran

Abstract: We present the optimization of the manufacturing process of the ۵nm bulk-FinFET technology by using the ۳D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the ۵nm FinFET. The improvement of drivecurrent is one of the most important issues in the FinFETs design. We first investigatethe impact of manufacturing process parameters include gate oxide thickness, type ofthe gate oxide, height of fin, and doping of the source and drain region on thresholdvoltage, breakdown voltage, and drive current of the transistor. Then, by selecting theoptimal parameters of the manufacturing process, we improve the drive current of the۵nm bulk-FinFET.

FinFET, Manufacturing Process, Drive Current, Threshold Voltage, DIBL Effect