Shahram Rafiee Rafat - Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran
Zahra Ahangari - Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran.
Mohammad Mahdi Ahadian - Institute for Nanoscience and Nanotechnology (INST), Sharif University of Technology, Azadi Avenue, ۱۴۵۸۸-۸۹۶۹۴ Tehran, Iran

Organic-inorganic halide perovskite thin film perovskite solar cells are gaining much attention, in recent years. Designing proper electron transport layer (ETL) and hole transport layer (HTL) with high quality to achieve devices with higher efficiency are fundamental. One dimensional (۱D) nanostructures are newly introduced materials with high mobility and low recombination rate, which may improve the device performance. In this paper, ۱D ZnO nanorods (ZnO-NRs) as well as planar TiO۲ are considered as the ETL of the device and their electrical performance are compared with different HTL materials in Sn- and Pb- perovskite. In addition, impact of critical design parameters including absorber thickness, interface defect density, back contact electrode materials on the performance of the device are comprehensively assessed. In this work, the simulations have been carries out using a ۱D Solar Cell Capacitance Simulator (SCAPS-۱D). The results show that in Sn- perovskite, ZnO-NRs has superior performance in comparison with TiO۲ with maximum photon conversion efficiency (PCE) of ۱۶.۷ % and short circuit current density of ۳۰.۲۱(mA/cm۲). However, in terms of Pb-perovskite planar TiO۲ has given the best performance with PCE of ۱۹.۶%. The results in this paper pave the way for introducing inexpensive high performance solar cell.

Perovskite Solar Cell, Electron transport layer, Hole Transport Layer, Efficiency, SCAPS-۱D, Nanorods