Mahsa Mehrad - School of Engineering, Damghan University, Damghan, Iran
Meysam Zareiee - School of Engineering, Damghan University, Damghan, Iran

High breakdown voltage and reduced specific on-resistance are obtain in the new LDMOS structure with wide band gap material in the buried oxide. GaN with higher mobility and wider band gap energy than silicon is an important material that causes better performance in power devices. Moreover, self-heating effects of the proposed LDMOS structure is controlled using two other Si۳N۴ windows at the top and bottom of the GaN window. Our simulation with two-dimensional ATLAS simulator shows that the proposed three windows in buried oxide of the LDMOS transistor (TW-LDMOS) has better reliability than conventional LDMOS (C-LDMOS) structure due to the flexible behavior of the TW-LDMOS in higher drain voltages and reduced electron temperature.

LDMOS, GaN, Breakdown voltage, Hot electron effect