Saied Marjani - Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran

In this paper, the radio frequency performance of hetero dielectricheterojunction double gate tunnel field-effect transistor (TFET) isinvestigated and compared with conventional double gate TFET. Theradio frequency parameters include transconductance (gm),transconductance generation factor (TGF), unit gain cut-off frequency(fT), maximum oscillation frequency (fmax), gain bandwidth product(GBP) and transconductance frequency product (TFP). The Gaussiandoping helps in achieving the same by analytically varying the dopingprofile throughout the specified region. The Gaussian drain dopingprofile along with hetero dielectric engineering is also responsible forimproved radio frequency figure of merits in terms of fT, GBW, andTFP for high-frequency applications.

Radio frequency, Hetero dielectric, Heterojunction, Double gate, TFETs