Muhammad Kashif ۱
Muhammad Salman Habib ۱
Muhammad Asif Rafiq ۱
Moaz Waqar ۲
Muhammad Asif Hussain ۳
Ayesha Iqbal ۱
Mehboob Ahmed Abbasi ۱
Shahid Saeed ۱

The classical system of combining modern perovskite and wurtzite structure semiconductor materials is used to model the internal structure for the applications of functional novel electronic devices. The structure-property relation has a significant impact on the properties of metal oxides-based functional ceramics. The structural and electrical properties of SrTiO۳-xZnO (۰ ≤x≤ ۱۰ wt%) ceramics produced via solid-state reaction (SSR) were thoroughly examined. X-ray diffraction (XRD) and scanning electron microscopy confirmed the presence of a mono-phase cubic structure with Pm۳̅m space group and resulted in increased density respectively. Complex impedance spectroscopy (CIS) was carried out from ۳۰۰ to ۵۰۰ °C temperature within the frequency range of ۱۰۰ Hz to ۱ MHz to study the contribution of grain bulk and grain boundary for impedance behavior. Grain boundaries dominated the overall resistance of the samples and the addition of ZnO in SrTiO۳ caused an increase in the overall conductivity. Increasing temperature decreases the resistance of both components, and at higher frequencies that confirms the negative temperature coefficient resistance (NTCR) behavior of the samples. Increasing temperature decreases the relaxation of grain bulk and grain boundary thus predicting the hopping conduction mechanism. The results will be helpful to engineer the microstructure of SrTiO۳ based on practical applications such as sensors, actuators, and energy devices.The classical system of combining modern perovskite and wurtzite structure semiconductor materials is used to model the internal structure for the applications of functional novel electronic devices. The structure-property relation has a significant impact on the properties of metal oxides-based functional ceramics. The structural and electrical properties of SrTiO۳-xZnO (۰ ≤x≤ ۱۰ wt%) ceramics produced via solid-state reaction (SSR) were thoroughly examined. X-ray diffraction (XRD) and scanning electron microscopy confirmed the presence of a mono-phase cubic structure with Pm۳̅m space group and resulted in increased density respectively. Complex impedance spectroscopy (CIS) was carried out from ۳۰۰ to ۵۰۰ °C temperature within the frequency range of ۱۰۰ Hz to ۱ MHz to study the contribution of grain bulk and grain boundary for impedance behavior. Grain boundaries dominated the overall resistance of the samples and the addition of ZnO in SrTiO۳ caused an increase in the overall conductivity. Increasing temperature decreases the resistance of both components, and at higher frequencies that confirms the negative temperature coefficient resistance (NTCR) behavior of the samples. Increasing temperature decreases the relaxation of grain bulk and grain boundary thus predicting the hopping conduction mechanism. The results will be helpful to engineer the microstructure of SrTiO۳ based on practical applications such as sensors, actuators, and energy devices.

Semiconductor, Complex impedance spectroscopy, Relaxation time, Hopping conduction, Sensors