An FVF-Based Gm-Enhanced fully balanced Preamplifier

Publish Year: 1403
نوع سند: مقاله ژورنالی
زبان: Persian
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شناسه ملی سند علمی:

JR_TJEE-54-1_011

تاریخ نمایه سازی: 29 اردیبهشت 1403

Abstract:

A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of ۱۵۰nW from a ۰.۶V supply voltage. The Spectre Post-layout simulations with TSMC ۱۸۰nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of ۱۴۱.۵dB and ۳-dB frequency bandwidth of ۲.۴kHz at ۶۰dB closed-loop configuration. The load capacitance is set to be ۵pF. The proposed structure also delivers high CMRR and PSRR values of ۱۴۸.۳dB and ۱۵۳.۷dB, respectively.

Authors

حسن فرجی بگتاش

Faculty of Electrical Engineering, Sahand University of Technology, Sahand New Town, Tabriz ۵۳۳۱۸۱۷۶۳۴, Iran

M. Kargar

Iranian Space Research Center (ISRC), Tehran, Iran

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