Mourad Hebali - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.
Benaoumeur Ibari - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.
Menaouer Bennaoum - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.
Mohammed El Amine Beyour - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.
Mohammed Berka - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.
Hocine Abdelhak Azzeddine - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.
Abdelkader Maachou - Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, Mascara, P. O. Box: ۲۹۰۰۰, Algeria.

In this research paper, the electrical properties of an ITO/Al۰.۷Ga۰.۳As/ITO solar cell were investigated using SILVACO ۲D-Atlas. Characterization was performed through static characteristics (I–V) and (P-V)) at room temperature and under standard spectrum AM۱.۵ illumination. Open-circuit voltage (VOC), short-circuit current (ISC), maximum power (Pmax), and fill factor (FF) were also extracted from these characteristics. To obtain more credible results, mid-gap defects were included in the simulation, and a comparison was made with a silicon-based solar cell. The results showed that the presence of mid-gap defects in the solar cells has a detrimental effect on their electrical performance, increasing recombination and reducing the current of the solar cell. Additionally, the inclusion of defects enhances the realism of the simulation results. Despite the inclusion of defects, the ITO/Al۰.۷Ga۰.۳As/ITO solar cell maintains its ideality due to its high fill factor (FF) of ۸۰.۷۳%. The results obtained in this study will serve as a reference for choosing appropriate semiconductor materials for solar cells, especially for use in hostile environments.

Si, AlxGa۱-xAs, III-V Solar cells, Mid-gap defects, Recombination, Static characteristics and Electrical parameters