Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses.
عنوان مقاله: Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses.
شناسه ملی مقاله: JR_JSMA-16-1_004
منتشر شده در در سال 1402
شناسه ملی مقاله: JR_JSMA-16-1_004
منتشر شده در در سال 1402
مشخصات نویسندگان مقاله:
A Boussaha - Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria
Rafik Makhloufi - Mechanical Engineering Department, University of Batna۲, Algeria
R Benbouta - Department of Mechanical Engineering, Faculty of Technology, University of Batna۲, Algeria
Mourad BRIOUA - Faculty of Technology, University of Batna ۲, Algeria
خلاصه مقاله:
کلمات کلیدی:
A Boussaha - Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna ۲ Mostafa Ben Boulaid, Batna, Algeria
Rafik Makhloufi - Mechanical Engineering Department, University of Batna۲, Algeria
R Benbouta - Department of Mechanical Engineering, Faculty of Technology, University of Batna۲, Algeria
Mourad BRIOUA - Faculty of Technology, University of Batna ۲, Algeria
Interface
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/2056965/