Hadi Shahnazarisani - Semnan University
Ali Asghar Orouji - Semnan University

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the ۲-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulation results show that the proposed structure has an excellent effect on the driving current. The breakdown voltage of the INL-SOI MESFET structure gets a ۳۳.۳۳% enhancement when compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency, and maximum available gain have been evaluated and improved in the proposed structure.

maximum available gain, maximum oscillation frequency, silicon on insulator (SOI), MESFET